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| PD - 97269 IRGB4045DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * * * * * * * * * * Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 C 5s SCSOA Square RBSOA 100% of the Parts Tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free Package G E C VCES = 600V IC = 6.0A, TC = 100C tsc > 5s, Tjmax = 175C n-channel C VCE(on) typ. = 1.7V Benefits * High Efficiency in a Wide Range of Applications * Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses * Rugged Transient Performance for Increased Reliability * Excellent Current Sharing in Parallel Operation * Low EMI E G C TO-220AB G C E Gate Collector Emitter Absolute Maximum Ratings Parameter VCES IC@ TC = 25C IC@ TC = 100C ICM ILM IF@TC=25C IF@TC=100C IFM VGE PD @ TC =25 PD @ TC =100 TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current c Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current d Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 600 12 6.0 20 20 8.0 4.0 20 20 30 77 39 -55 to + 175 300 (0.063 in. (1.6mm) from case) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA Junction-to-Case - IGBT e Junction-to-Case - Diode e Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount e Min. -- -- -- -- Typ. -- -- 0.5 -- Max. 1.94 6.30 -- 62 Units C/W 1 www.irf.com 11/28/06 IRGB4045DPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)CES V(BR)CES/TJ Min. Typ. Max. Units 600 -- -- -- -- 4.0 -- -- -- -- -- -- -- -- 0.36 1.7 2.07 2.14 -- -13 5.8 -- -- 1.60 1.30 -- -- -- 2.0 -- -- 6.5 -- -- 25 250 2.30 -- 100 nA V V S A V V Conditions VGE = 0V, Ic =100 A Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage f Ref.Fig o V/C VGE = 0V, Ic = 250A ( 25 -175 C ) f CT6 IC = 6.0A, VGE = 15V, TJ = 25C IC = 6.0A, VGE = 15V, TJ = 150C IC = 6.0A, VGE = 15V, TJ = 175C VCE = VGE, IC = 150A VCE = 25V, IC = 6.0A, PW =80s VGE = 0V,VCE = 600V VGE = 0V, VCE = 600V, TJ =175C IF = 6.0A IF = 6.0A, TJ = 175C VGE = 20 V 8 o mV/C VCE = VGE, IC = 250A ( 25 -175 C ) VCE(on) VGE(th) VGE(th)/TJ Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current 5,6,7,9, 10 ,11 9,10,11,12 gfe ICES VFM IGES Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Min. Typ. Max. Units -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 13 3.1 6.4 56 122 178 27 11 75 17 140 189 329 26 12 95 32 350 29 10 19.5 4.65 9.6 86 143 229 35 15 93 22 -- -- -- -- -- -- -- -- -- -- pF VGE = 0V VCC = 30V f = 1Mhz ns J ns J nC IC = 6.0A VCC = 400V VGE = 15V Conditions Ref.Fig 24 CT1 IC = 6.0A, VCC = 400V, VGE = 15V RG = 47, L=1mH, LS= 150nH, TJ = 25C Energy losses include tail and diode reverse recovery CT4 IC = 6.0A, VCC = 400V RG = 47, L=1mH, LS= 150nH TJ = 25C IC = 6.0A, VCC = 400V, VGE = 15V RG = 47, L=1mH, LS= 150nH, TJ = 175C Energy losses include tail and diode reverse recovery 13,15 CT4 WF1,WF2 14,16 CT4 WF1,WF2 CT4 IC = 6.0A, VCC = 400V RG = 47, L=1mH, LS= 150nH TJ = 175C 23 TJ = 175C, IC = 20A FULL SQUARE VCC = 500V, Vp =600V RG = 100, VGE = +15V to 0V SCSOA Erec trr Irr Short Circuit Safe Operating Area Reverse recovery energy of the diode Diode Reverse recovery time Peak Reverse Recovery Current 5 -- -- -- -- 178 74 12 -- -- -- -- s J ns A VCC = 400V, Vp =600V RG = 100, VGE = +15V to 0V TJ = 175oC VCC = 400V, IF = 6.0A VGE = 15V, Rg = 47, L=1mH, LS=150nH 4 CT2 22, CT3 WF4 17,18,19 20,21 WF3 Notes: VCC = 80% (VCES), VGE = 15V, L = 1.0mH, RG = 47. Pulse width limited by max. junction temperature. R is measured at TJ approximately 90C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 2 www.irf.com IRGB4045DPBF 14 12 10 Ptot (W) 80 70 60 50 40 30 IC (A) 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 T C (C) 20 10 0 0 20 40 60 80 100 120 140 160 180 T C (C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 100 Fig. 2 - Power Dissipation vs. Case Temperature 100 10sec 10 IC (A) 100sec 10 IC A) 1 Tc = 25C Tj = 175C Single Pulse 0.1 1 10 DC 1 0 100 VCE (V) 1000 10 100 VCE (V) 1000 Fig. 3 - Forward SOA, TC = 25C; TJ 175C 20 20 Fig. 4 - Reverse Bias SOA TJ = 175C; VCE = 15V 15 Top VGE = 18V VGE = 15V VGE = 12V VGE = 10V 15 Top ICE (A) 10 Bottom VGE = 8.0V ICE (A) 10 Bottom V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE 5 5 0 0 2 4 6 8 10 0 0 2 4 6 8 10 VCE (V) VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s www.irf.com 3 IRGB4045DPBF 20 Top V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE 20 18 16 14 12 IF (A) 15 Bottom -40C 25C 175C ICE (A) 10 10 8 5 6 4 2 0 0 2 4 6 8 10 0 0.0 1.0 VF (V) 2.0 3.0 VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175C; tp = 80s 10 Fig. 8 - Typ. Diode Forward Characteristics tp = 80s 10 8 8 VCE (V) ICE = 6.0A 4 ICE = 12A VCE (V) 6 ICE = 3.0A 6 ICE = 3.0A ICE = 6.0A ICE = 12A 4 2 2 0 5 10 VGE (V) 15 20 0 5 10 VGE (V) 15 20 Fig. 9 - Typical VCE vs. VGE TJ = -40C 10 Fig. 10 - Typical VCE vs. VGE TJ = 25C 20 IC, Collector-to-Emitter Current (A) 18 16 14 12 10 8 6 4 2 0 4 8 ICE = 3.0A ICE = 6.0A ICE = 12A 4 T J = 25C T J = 175C VCE (V) 6 2 0 5 10 VGE (V) 15 20 6 8 10 12 14 16 VGE, Gate-to-Emitter Voltage (V) Fig. 11 - Typical VCE vs. VGE TJ = 175C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10s 4 www.irf.com IRGB4045DPBF 400 350 Swiching Time (ns) 1000 300 Energy (J) tdOFF 100 tF 10 tdON tR 250 200 150 100 50 0 2 4 6 8 10 12 14 EON EOFF 1 2 4 6 8 IC (A) 10 12 14 Fig. 13 - Typ. Energy Loss vs. IC TJ = 175C; L = 1mH; VCE = 400V, RG = 47; VGE = 15V. 220 200 180 EOFF IC (A) Fig. 14 - Typ. Switching Time vs. IC TJ = 175C; L=1mH; VCE= 400V RG= 47; VGE= 15V 1000 Swiching Time (ns) Energy (J) 160 140 120 100 80 60 0 25 50 75 100 125 EON 100 tdOFF tF tdON tR 10 1 0 25 50 75 100 125 RG () Fig. 15 - Typ. Energy Loss vs. RG TJ = 175C; L = 1mH; VCE = 400V, ICE = 6.0A; VGE = 15V 30 25 RG = 10 20 IRR (A) IRR (A) Rg () Fig. 16- Typ. Switching Time vs. RG TJ = 175C; L=1mH; VCE= 400V ICE= 6.0A; VGE= 15V 22 20 18 16 15 10 5 0 2 4 6 8 IF (A) RG = 22 RG = 47 RG = 100 14 12 10 8 6 10 12 14 0 25 50 75 100 125 RG () Fig. 17 - Typical Diode IRR vs. IF TJ = 175C Fig. 18 - Typical Diode IRR vs. RG TJ = 175C; IF = 6.0A www.irf.com 5 IRGB4045DPBF 20 18 16 IRR (A) 1200 1000 12A 10 22 47 14 12 10 QRR (C) 800 600 100 6.0A 400 8 6 0 200 400 600 800 1000 1200 diF /dt (A/s) 3.0A 200 0 500 1000 1500 diF /dt (A/s) Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 6.0A; TJ = 175C 350 300 250 Energy (J) Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V; TJ = 175C 20 50 RG = 10 RG = 22 RG = 47 15 Time (s) Tsc Isc 40 Current (A) 200 150 10 30 RG = 100 100 50 2 4 6 8 IF (A) 10 12 14 5 20 0 8 10 12 14 16 18 VGE (V) 10 Fig. 21 - Typical Diode ERR vs. IF TJ = 175C 1000 Cies VGE, Gate-to-Emitter Voltage (V) Fig. 22- Typ. VGE vs. Short Circuit Time VCC=400V, TC =25C 16 14 12 10 8 6 4 2 0 V CES = 400V V CES = 300V Capacitance (pF) 100 Coes 10 Cres 1 0 100 200 300 400 500 VCE (V) 0 2 4 6 8 10 12 14 Fig. 23- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Q G, Total Gate Charge (nC) Fig. 24 - Typical Gate Charge vs. VGE ICE = 6.0A, L=600H 6 www.irf.com IRGB4045DPBF 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C 4 Ri (C/W) 0.0415 0.7262 0.7721 0.4016 i (sec) 0.000005 0.000076 0.000810 0.004929 1 2 3 4 0.01 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 D = 0.50 Thermal Response ( Z thJC ) 1 0.20 0.10 0.05 0.02 J J 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 C 2 3 4 4 Ri (C/W) 0.2195 1.7733 2.9352 1.3704 i (sec) 0.000023 0.000165 0.001493 0.013255 0.1 0.01 1 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7 IRGB4045DPBF L L 0 DUT 1K VCC 80 V + - DUT Rg 480V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - Typical Filter Circuit for V(BR)CES Measurement 8 www.irf.com IRGB4045DPBF 600 500 400 tf VCE (V) 90% ICE 12 10 8 VCE (V) 600 500 400 300 200 100 0 -100 4.3 4.5 time (s) Eon Loss 4.7 10% test current 5% VCE 30 tr 25 TEST CURRENT 20 15 10 5 0 -5 300 200 100 0 Eoff Loss 5% ICE 5% VCE 6 4 2 0 -2 0 0.2 0.4 time(s) 0.6 0.8 1 90% test current -100 -0.2 Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175C using Fig. CT.4 100 0 -100 -200 -300 -400 -500 -600 -0.05 Peak IRR 10% Peak IRR 15 QRR tRR 10 5 Vce (V) 500 450 400 350 300 250 200 150 100 50 0 -2 -1 0 1 2 3 4 5 6 7 8 Time (uS) 80 VCE 70 60 50 40 ICE 30 20 10 0 -10 -20 VF (V) 0 -5 -10 -15 -20 0.05 0.15 time (S) 0.25 WF.3- Typ. Diode Recovery Waveform @ TJ = 175C using CT.4 WF.4- Typ. Short Circuit Waveform @ TJ = 25C using CT.3 www.irf.com 9 IRGB4045DPBF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information @Y6HQG@) UCDTADTA6IADSA GPUA8P9@A A DIU@SI6UDPI6G (A! S@8UDAD@S GPBP 96U@A8P9@ @6SAA2A! X@@FA GDI@A8 ( Q6SUAIVH7@S &'( 6TT@H7G@9APIAXXA DIAUC@A6TT@H7GAGDI@AA8A Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqAAArrA 6TT@H7G GPUA8P9@ TO-220AB packages are not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 11/06 10 www.irf.com |
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